Preparation and Mechanistic Exploration of Fermented Shrimp Surimi Gel Utilizing Enterococcus lactis S-15.

This study aimed to utilize Enterococcus lactis S-15 for the preparation of fermented shrimp gels. The gel properties and the gelation mechanism of proteins were investigated under acid-induced denaturation and protein degradation, and the quality of the gel was evaluated. Results showed that the pH of the shrimp surimi decreased from 7.35 to 4.74. The optimal gel strength observed at 24 h of fermentation was 326.41 g × cm, and disulfide bonds played a crucial role in the fermented gel. The fermented gel exhibited higher cooking loss rates and freeze-thaw loss rates compared to the heat-induced gel (control). However, fermented gels exhibited high overall acceptability both before and after cooking. The volatile basic nitrogen content in the fermented gel remained below 28.00 mg/100 g, within the safe range, and no histamine was detected. The results provide valuable data for the development and reprocessing of fermented shrimp surimi gel.

2D SiP2/h-BN for a Gate-Controlled Phototransistor with Ultrahigh Sensitivity.

Two-dimensional (2D) materials are extremely attractive for the construction of highly sensitive photodetectors due to their unique electronic and optical properties. However, developing 2D photodetectors with ultrahigh sensitivity for extremely low-light-level detection is still a challenge owing to the limitation of high dark current and low detectivity. Herein, a gate-controlled phototransistor based on 2D SiP2/hexagonal boron nitride (h-BN) was rationally designed and demonstrated ultrahigh sensitivity for the first time. With a back-gate device geometry, the SiP2/h-BN phototransistor exhibits an ultrahigh detectivity of 3.4 × 1013 Jones, which is one of the highest values among 2D material-based photodetectors. In addition, the phototransistor also shows a gate tunable responsivity of ≤43.5 A/W at a gate voltage of 30 V due to the photogating effect. The ultrahigh sensitivity of the SiP2-based phototransistor is attributed to the extremely low dark current suppressed by the phototransistor configuration and the improved photocurrent by using h-BN as a substrate to reduce charge scattering. This work provides a facile strategy for improving the detectivity of photodetectors and validates the great potential of 2D SiP2 phototransistors for ultrasensitive optoelectronic applications.